Experimental investigation on influence of boundary conditions on cooling effect and mechanism of crushed-rock layers

被引:68
作者
Lai, Yuanming [1 ]
Ma, Weidong
Zhang, Mingyi
Yu, Wenbing
Gao, Zhihua
机构
[1] Chinese Acad Sci, State Key Lab Frozen Soil Engn Cold & Arid Reg, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Environm & Engn Res Inst, Lanzhou 730000, Peoples R China
关键词
boundary condition; cooling effect; cooling mechanism; crushed-rock mass;
D O I
10.1016/j.coldregions.2006.03.003
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
A series of experiments were carried out for the crushed-rock layers with open and closed boundaries, respectively. According to the measured temperature and calculated velocity distributions in the crushed-rock layers with the upper boundaries covered and exposed, it is found that, under the upper boundary covered, the heat transfer from the lower area to the upper area of the crushed-rock layer is by means of the natural convection and the thermal conduction among the crushed rocks when the temperature on the top surface of the crushed-rock layer is lower than that on the bottom surface. The heat transfer from the upper area to the lower area of the crushed-rock layer is mainly carried out by thermal conduction when the temperature on the top surface is higher than that on the bottom, and at that time the air in the crushed-rock layer almost kept static, which could obstruct the heat transfer. Therefore, the crushed-rock mass with closed boundaries can efficiently remove heat from its bottom surface during cold season and intakes a little heat during warm season. The net effect shows that it can be as a passive cooling method. Its characteristic is of thermal semiconductor. However, under the upper boundary exposed, when the wind of an average temperature 0.5 degrees C crosses over the top surface of the crushed-rock layer, the thermal transfer is mainly by the forced convection. Its characteristic is not of thermal semiconductor and its cooling effect is not obvious. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:114 / 121
页数:8
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