Behavioral modeling of SRIM tables for numerical simulation

被引:24
作者
Martinie, S.
Saad-Saoud, T.
Moindjie, S.
Munteanu, D.
Autran, J. L. [1 ]
机构
[1] Aix Marseille Univ, F-13397 Marseille 20, France
关键词
SRIM; Stopping power; Stopping range; Behavioral modeling; Numerical simulation;
D O I
10.1016/j.nimb.2013.12.023
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This work describes a simple way to implement SRIM stopping power and range tabulated data in the form of fast and continuous numerical functions for intensive simulation. We provide here the methodology of this behavioral modeling as well as the details of the implementation and some numerical examples for ions in silicon target. Developed functions have been successfully tested and used for the simulation of soft errors in microelectronics circuits. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:2 / 6
页数:5
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