Local resonant conductance in magnetic tunnel junctions

被引：3
作者：
Kechrakos, D [1 ]
Tsymbal, EY
Pettifor, DG
机构：
[1] NCSR Demokritos, Inst Mat Sci, Athens 15310, Greece
[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 242卷
关键词：
magnetic tunnel junctions; impurities; resonant tunneling; tight-binding calculation;
D O I：
10.1016/S0304-8853(01)01070-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using a simple tight-binding model and the Kubo formula we have calculated the lateral distribution of the tunneling conductance across a magnetic tunnel junction probed by scanning tunneling microscopy. We find that the presence of an impurity within the barrier layer can cause a sharp spike in the conductance distribution, in agreement with recent experiments. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：457 / 460
页数：4
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