Ultra-low switching power, crystallographic analysis, and switching mechanism for SnXTe100-X/Sb2Te3 diluted superlattice system

被引：24

作者：

Soeya, Susumu ^{[1
]}

Shintani, Toshimichi ^{[1
]}

Odaka, Takahiro ^{[1
]}

Kondou, Reiko ^{[1
]}

Tominaga, Junji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Collaborat Res Team, Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

基金：

日本学术振兴会;

关键词：

MEMORY;

D O I：

10.1063/1.4817068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultra-low switching power (similar to 1/50th-1/2250th that of a Ge2Sb2Te5 device) was obtained in a SnXTe100-X/Sb2Te3 diluted superlattice (SL) device (X = 10, 20, and 35 at.%). XRD analysis showed that there was little coexistence of the SnTe/Sb2Te3 SL, Bi2Te3-type SnSbTe-alloy and Te phases. Detailed crystallographic analysis showed that there is a high probability that the SnSbTe-alloy phase independently changed into a SL structure. This self-assembled SL structure had a vacancy layer in a specific Te layer. Some phenomenon, such as Sn switching, in the self-assembled SL might lead to the ultra-low switching power. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 13 条

[1] Overview of candidate device technologies for storage-class memory [J].