Ultra-low switching power, crystallographic analysis, and switching mechanism for SnXTe100-X/Sb2Te3 diluted superlattice system

被引:23
作者
Soeya, Susumu [1 ]
Shintani, Toshimichi [1 ]
Odaka, Takahiro [1 ]
Kondou, Reiko [1 ]
Tominaga, Junji [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Collaborat Res Team, Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan
基金
日本学术振兴会;
关键词
MEMORY;
D O I
10.1063/1.4817068
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ultra-low switching power (similar to 1/50th-1/2250th that of a Ge2Sb2Te5 device) was obtained in a SnXTe100-X/Sb2Te3 diluted superlattice (SL) device (X = 10, 20, and 35 at.%). XRD analysis showed that there was little coexistence of the SnTe/Sb2Te3 SL, Bi2Te3-type SnSbTe-alloy and Te phases. Detailed crystallographic analysis showed that there is a high probability that the SnSbTe-alloy phase independently changed into a SL structure. This self-assembled SL structure had a vacancy layer in a specific Te layer. Some phenomenon, such as Sn switching, in the self-assembled SL might lead to the ultra-low switching power. (C) 2013 AIP Publishing LLC.
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收藏
页数:4
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