A Split Gate Vertical Gal\ Power Transistor with Intrinsic Reverse Conduction Capability and Low Gate Charge

in this work, a vertical normally-off GaN device featuring split-gate with intrinsic reverse conduction (RCVFET) functionality and low gate capacitance is proposed and studied by simulation. Different from the lateral AIGaN/GaN HEMT, the RC characteristics of the proposed RCVFET are independent with the threshold voltage of the device, while a low V-R,V-on of 0.8 V is obtained. Owing to the split-gate design, the gate charge is respectably reduced that is beneficial for improving the switching speed of the RCVFET. The device exhibits a low R.. of 0.93 ma cm2 and a BV of 1280V. The reverse recovery time is 13ns. The QGD is 80 nC that is only one fifth of that obtained in the reference device without split-gate. Terms GaN, vertical, normally-off, split gate, gate charge, reverse conduction, schottkv source, reverse recovery time, turn-on voltage.