Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs

被引：169

作者：

Faccio, F. ^{[1
]}

Michelis, S. ^{[1
]}

Cornale, D. ^{[1
,2
]}

Paccagnella, A. ^{[2
]}

Gerardin, S. ^{[2
]}

机构：

[1] CERN, PH Dept, CH-1211 Geneva, Switzerland

[2] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期

关键词：

Metal-oxide semiconductor (MOS) transistors; narrow channel effect; radiation-induced narrow channel effect (RINCE); radiation-induced short channel effect (RISCE); short channel effect; total ionizing dose; IONIZING-RADIATION; CMOS TECHNOLOGIES; DEVICES; OXIDES; DEGRADATION; TRANSISTORS; DEPENDENCE; PROTON;

D O I：

10.1109/TNS.2015.2492778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behavior of transistors in commercial-grade complementary metal-oxide semiconductor technologies in the 65 and 130 nm nodes has been explored up to a total ionizing dose of 1 Grad. The large dose tolerance of the thin gate oxide is confirmed, but defects in the spacer and STI oxides have a strong effect on the performance of the transistors. A radiation-induced short channel effect is traced to charge trapping in the spacers used for drain engineering, while a radiation-induced narrow channel effect is due to defect generation in the lateral isolation oxide (STI). These strongly degrade the electrical characteristics of short and narrow channel transistors at high doses, and their magnitude depends on the applied bias and temperature during irradiation in a complex way.

引用

页码：2933 / 2940

页数：8

共 26 条

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