Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

被引：25

作者：

Auth, Dominik ^{[1
]}

Liu, Songtao ^{[2
]}

Norman, Justin ^{[3
]}

Bowers, John Edward ^{[2
]}

Breuer, Stefan ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Appl Phys, Schlossgartenstr 7, D-64289 Darmstadt, Germany

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 19期

关键词：

TIMING JITTER; PHOTONICS; SI; THRESHOLD; CIRCUITS; DEVICES; GAIN; CHIP;

D O I：

10.1364/OE.27.027256

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at 1310 nm are promising sources for high-speed and high-capacity communication applications. We report on the stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis (001) silicon substrate by solid-source molecular beam epitaxy. Optical pulses as short as 1.7 ps at a pulse repetition rate or inter-mode beat frequency of 9.4 GHz are obtained. A minimum pulse-to-pulse timing jitter of 9 fs, corresponding to a repetition rate line width of 4(X) Hz, is demonstrated. The generated optical frequency combs yield exceptional low amplitude jitter performance and comb widths exceed 5.5 nm at a -3 dB criteria, containing more than 100 comb carriers. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：27256 / 27266

页数：11

共 51 条

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