A Compact Current- and Voltage-Mode Model of Antenna-Coupled FET Terahertz Detectors

被引：6
|
作者：
Perenzoni, Matteo [1 ]
Ali, Muhammad [1 ,2 ]
Pepponi, Giancarlo [1 ]
Guidi, Vincenzo [3 ]
机构：
[1] Fdn Bruno Kessler, I-38123 Trento, Italy
[2] Pmdtechnol Ag, D-57074 Siegen, Germany
[3] Univ Ferrara, Dipartimento Fis & Sci Terra, I-44122 Ferrara, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 02期
关键词：
Detectors; Logic gates; Field effect transistors; Mathematical model; Antennas; Analytical models; Semiconductor device modeling; CMOS technology; compact modeling; direct detection; impedance; planar antennas; plasma waves; responsivity; self-mixing; terahertz (THz) detectors; NONRESONANT DETECTION; RADIATION;
D O I：
10.1109/TED.2020.3042450
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article a comprehensive modeling of cold-biased field-effect transistors (FETs) used as terahertz (THz) detectors is developed. The described model is based upon the transistor Enz-Krummenacher-Vittoz (EKV) model in order to provide valid quantities also near and below the transistor threshold by using available technology parameters, without any extra fitting nor calibration. Important aspects such as the antenna coupling and the effect of amplitude modulation of the THz source are considered in a single, handy, analytical model. THz measurements performed on specifically designed FET detectors confirm its validity, providing a powerful tool and giving a clear insight of the role of available variables. The model can anticipate time-consuming numerical simulations or more physically accurate models requiring experimental parameters calibration, that may complement the results for better accuracy.
引用
收藏
页码：471 / 478
页数：8
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