Two stages of post-growth recovery in molecular beam epitaxy: a surface X-ray diffraction study

被引：8

作者：

Kaganer, VM ^{[1
]}

Braun, W ^{[1
]}

Jenichen, B ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

SURFACE SCIENCE | 2004年 / 560卷 / 1-3期

关键词：

X-ray scattering; diffraction; and reflection; epitaxy; gallium arsenide; surface structure; morphology; roughness; and topography; models of surface kinetics;

D O I：

10.1016/j.susc.2004.04.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study the kinetics of the GaAS(0 0 1) surface during and after homoepitaxial deposition of GaAs by in situ surface X-ray diffraction. Two stages of recovery are recognized and quantitatively described with kinematical scattering theory. In the first, fast stage of recovery, adatom islands and advacancy islands (pits) on adjacent layers annihilate, giving rise to a surface with only one incompletely filled layer. The second, slow stage of recovery is the coarsening of the remaining islands or pits. The experimental data are compared with Monte Carlo simulations of the deposition and recovery kinetics. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：88 / 102

页数：15

共 49 条

[1] Determination of scaling exponents in Ag(100) homoepitaxy with x-ray diffraction profiles
Alvarez, J
Lundgren, E
Torrelles, X
Ferrer, S
[J]. PHYSICAL REVIEW B, 1998, 57 (11): : 6325 - 6328
[2] SPECTRUM LINE PROFILES - VOIGT FUNCTION
ARMSTRONG, BH
[J]. JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, 1967, 7 (01) : 61 - +
[3] VOIGT-FUNCTION MODELING IN FOURIER-ANALYSIS OF SIZE-BROADENED AND STRAIN-BROADENED X-RAY-DIFFRACTION PEAKS
BALZAR, D
LEDBETTER, H
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1993, 26 (pt 1) : 97 - 103
[4] Non-Ostwald coarsening of the GaAs(001) surface
Braun, W
Kaganer, VM
Jenichen, B
Ploog, KH
[J]. PHYSICAL REVIEW B, 2004, 69 (16) : 165405 - 1
[5] Origin of electron diffraction oscillations during crystal growth
Braun, W
Daweritz, L
Ploog, KH
[J]. PHYSICAL REVIEW LETTERS, 1998, 80 (22) : 4935 - 4938
[6] Layer-by-layer growth of GaAs(001) studied by in situ synchrotron X-ray diffraction
Braun, W
Jenichen, B
Kaganer, VM
Shtukenberg, AG
Däweritz, L
Ploog, KH
[J]. SURFACE SCIENCE, 2003, 525 (1-3) : 126 - 136
[7] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH
CLARKE, S
VVEDENSKY, DD
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238
[8] GROWTH-KINETICS AND STEP DENSITY IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY
CLARKE, S
VVEDENSKY, DD
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2272 - 2283
[9] INFLUENCE OF SURFACE-MORPHOLOGY UPON RECOVERY KINETICS DURING INTERRUPTED EPITAXIAL-GROWTH
CLARKE, S
VVEDENSKY, DD
RICKETTS, MW
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 28 - 31
[10] SIMULATION OF RECOVERY KINETICS IN SI(001) MOLECULAR-BEAM EPITAXY
CLARKE, S
WILBY, MR
VVEDENSKY, DD
KAWAMURA, T
[J]. PHYSICAL REVIEW B, 1989, 40 (02): : 1369 - 1372

← 1 2 3 4 5 →