In/ITO Ohmic Contacts to Ga-face and N-face n-GaN for InGaN-based Light-emitting Diodes

被引：9

作者：

Kang, Ki Man ^{[1
]}

Jo, J. M. ^{[1
]}

Kwak, Joon Seop ^{[1
]}

Kim, Hyunsoo ^{[2
]}

Kim, Y. S. ^{[3
]}

Sone, C. ^{[3
]}

Park, Y. ^{[3
]}

机构：

[1] Sunchon Natl Univ, Dept Printed Elect Engn WCU, Chungnam 540742, South Korea

[2] Chonbuk Natl Univ, Dept Semicond & Chem Engn, Semicond Phys Res Ctr, Chonju 561756, South Korea

[3] Samsung LED Co, Suwon 443743, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 01期

关键词：

LED ITO; Ohmic contact; Polarity; P-TYPE ELECTRODES; TI/AL CONTACTS; AL;

D O I：

10.3938/jkps.55.318

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the In/indium tin oxide (ITO) scheme for obtaining high-quality Ohmic contacts to Ga-face and N-face nGaN for InGaN-based light-emitting diodes (LEDs). The In/ITO contacts to Ga-face n-GaN become Ohmic with specific contact resistances of 1.8 x 10(-3) Omega cm(2) when annealed at 30 degrees C for I min in a N-2 ambient The resistance of the In/ITO contacts to N-face n-GaN is shown to be much lower than that of the contacts to Ga-face n-GaN. This result indicates that the In/ITO scheme can serve as a highly-promising n-type Ohmic contact for vertical LEDs.

引用

页码：318 / 321

页数：4

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