Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

被引：4
作者：
Sabanskis, Andrejs [1 ]
Virbulis, Janis [1 ]
机构：
[1] Univ Latvia, Dept Phys, Jelgavas Str 3, LV-1004 Riga, Latvia
来源：
JOURNAL OF CRYSTAL GROWTH | 2019年 / 519卷
关键词：
Computer simulation; Heat transfer; Point defects; Thermal stresses; Czochralski method; Semiconducting silicon; BEHAVIOR; STRESS;
D O I：
10.1016/j.jcrysgro.2019.04.033
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Silicon single crystal growth by the Czochralski (CZ) technique is studied numerically using non-stationary mathematical models which allow to predict the evolution of the CZ system in time, including Dash neck, cone and cylindrical growth stages. The focus is on the point defect dynamics, also considering the effect of the thermal stresses. During the cylindrical stage, the crystal pull rate is temporarily reduced as in experiments by Abe et al. The crystal radius and heater power change is explicitly considered in the calculations for crystal diameters of 50, 100 and 200 mm and the agreement with experiments is discussed.
引用
收藏
页码：7 / 13
页数：7
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