High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

被引：6

作者：

Minato, Hiroya ^{[1
]}

Fujiwara, Kohei ^{[1
]}

Tsukazaki, Atsushi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

AIP ADVANCES | 2018年 / 8卷 / 05期

关键词：

TRANSPARENT CONDUCTING OXIDES; DOMAIN-WALLS; SEMICONDUCTOR; ILMENITE; MNSNO3; FETIO3;

D O I：

10.1063/1.5034403

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm(2)V(-1)s(-1) at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction. (C) 2018 Author(s).

引用

页数：6

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