Comparison of a density functional theory and a Hartree treatment of silicon quantum dot

被引:34
作者
Sée, J [1 ]
Dollfus, P [1 ]
Galdin, S [1 ]
机构
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
关键词
D O I
10.1063/1.1499524
中图分类号
O59 [应用物理学];
学科分类号
摘要
This article presents a self-consistent Poisson-Schrodinger calculation based on either the Hartree or the density functional theory for silicon quantum dots surrounded by silicon dioxide. These models can treat any shape of confining potential and take into account the different effective masses and permittivities of the materials. The energy states and the equivalent capacitance of a single dot are then determined as a function of dot radius and number of confined electrons. Finally, the Hartree approach and the density functional theory are compared. (C) 2002 American Institute of Physics.
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页码:3141 / 3146
页数:6
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