Influence of deposition rate and intermediate layer on crystal structure of Pb(Zr,Ti)O3thin films prepared by rf sputtering

被引：0

作者：

Mochizuki, S ^{[1
]}

Thomas, R ^{[1
]}

Mihara, T ^{[1
]}

Ishida, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Osaka 5638577, Japan

来源：

FERROELECTRICS | 2002年 / 271卷

关键词：

lead zirconate titanate; thin film; sputtering; intermediate layer; auger electron spectroscopy;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pb(Zr,Ti)O-3 (PZT) thin films were prepared by rf magnetron sputtering. To obtain perovskite phase at low substrate temperature, the influence of intermediate layers on crystallization were investigated. Mixed phases of perovskite and pyrochlore PZT were obtained on PbTiO3 intermediate layer at substrate temperature of 610degreesC. On the contrary, perovskite phase PZT was obtained without post deposition thermal annealing on amorphous PZT intermediate layer at substrate temperature and deposition rate of 610degreesC and 6 nm/min, respectively. In PZT (except the surface region) and in amorphous PZT intermediate layer, chemical composition of auger depth profile was uniform.

引用

页码：1861 / 1866

页数：6

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