Photoelastic characterization of residual stress in GaAs-wafers

被引：19

作者：

Geiler, H. D.

Karge, H.

Wagner, M.

Eichler, S.

Jurisch, M.

Kretzer, U.

Scheffer-Czygan, M.

机构：

[1] JenaWave GmbH, D-07745 Jena, Germany

[2] Freiberger Compound Mat, D-95099 Freiberg, Germany

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 1-3期

关键词：

stress imaging; photoelasticity; GaAs crystal; defect monitoring; nondestructive evaluation;

D O I：

10.1016/j.mssp.2006.01.076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Residual stress in GaAs-wafers was investigated on different length scales by rapid full wafer imaging and by microscopic imaging of dislocation cells, using photoelastic homodyne techniques. These non-contact and non-destructive defect and stress imaging methods will be described in detail. In connection with in situ calibration of the photoelastic SIRD (TM) measurement system absolute shear stress values can be extracted. Local stress fields imaged in mu m-scale by the photoelastic instrument SIREX (TM) show the defect arrangement in cell patterns and allow to characterize the local stress enhancement. The advantages and limits of the vertically integrated photoelasticity measurement employed in both systems will be discussed. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：345 / 350

页数：6

共 13 条

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