Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs

被引：17

作者：

Ando, Yuji ^{[1
]}

Takahashi, Hidemasa ^{[1
]}

Ma, Qiang ^{[2
]}

Wakejima, Akio ^{[2
]}

Suda, Jun ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648601, Japan

[2] Nagoya Inst Technol, Grad Sch Engn, Tsukuri Coll, Nagoya, Aichi 4668555, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 12期

关键词：

Field plate; GaN; high-electron mobility transistor (HEMT); passivation; SiN; MOBILITY TRANSISTORS; ALGAN/GAN HEMTS; PASSIVATION; LEAKAGE; SINX; SI3N4;

D O I：

10.1109/TED.2020.3029540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reports a systematic study focused on the mechanical stress effect of field-plate dielectric film on the electric characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMTs were fabricated on SiC substrates, where the stress of a SiN field-plate dielectric film ranged from -252 (compressive) to +26.5 (tensile) MPa. Si-rich and compressive SiN films exhibited a significant increase in the isolation leakage. On the other hand, relatively N-rich and tensile SiN films showed a significant increase in the gate leakage current of HEMTs. In addition, pulsed I - V measurements showed the suppression in the current collapse by increasing the tensile stress. Consequently, small current collapse and small gate leakage current were obtained simultaneously with good isolation, as the film stress was optimized.

引用

页码：5421 / 5426

页数：6

共 33 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].