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Impact induced adsorption of C20 on silicon (001) surface
被引:0
|作者:
Man, ZY
[1
]
Pan, ZY
Ho, YK
Zhu, WJ
机构:
[1] Fudan Univ, Inst Modern Phys, State Key Lab Mat Modificat Laser Ion & Electron, Shanghai 200433, Peoples R China
[2] Acad Sinica, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[3] CCAST, World Lab, Beijing 100080, Peoples R China
来源:
EUROPEAN PHYSICAL JOURNAL D
|
1999年
/
7卷
/
04期
关键词:
D O I:
暂无
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
Molecular dynamics simulations were carried out to investigate the adsorption of a low-energy C-20 on a reconstructed silicon (001)-(2 x 1) surface. The impact energies of the C-20 fullerene range from 1 eV/atom to 5 eV/atom. After impacting, the C-20 molecule is found to move along (011) direction and resides either in the trough or on the dimer at the end of our simulations. The lateral motion of C-20 on the surface is dependent on its incident energy. Chemical bonds are formed between C-20 and the surface. By the force field analysis, we show that the anisotropic molecule-surface interaction plays the leading role in the lateral motion of C-20 as well as its preferable adsorption sites on the dimerized Si surface. These findings are consistent with experimental observations of C-60 on Si (001) surface and small carbon clusters on solid surfaces.
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页码:595 / 599
页数:5
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