Resistance switching effect of Ag/Ln1-xCaxMnO3/Pt sandwich structure

被引：1
作者：
Wang, Q. [1 ]
Dong, R. [1 ]
Shang, D. S. [1 ]
Chen, T. L. [1 ]
Li, M. [1 ]
Chen, L. D. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceream, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2006年 / 78卷
基金：
中国国家自然科学基金;
关键词：
resistance switching; perovskite film; sandwich structure; fatigue; retention;
D O I：
10.1080/10584580600660355
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ag/Ln(1-x)Ca(x)MnO(3)/Pt (Ln = Pr, La, X = 0.3) sandwich structures showing electric-pulse induced reversible resistance switching properties provide a route for a new resistance random access memory (RRAM), because the electric-pulse induced high-resistance state and low-resistance state can be assimilated to logic I and 0 in RRAM systems, respectively. In this work the fatigue and the retention behavior of the electric-pulse induced resistance states have been studied. It is found that the retention properties of the EPIR materials can be modified by post-annealing of the materials and by the inner adjusting of the pulse applied mode. Moreover, the EPIR devices can be optimized by initializing using voltage sweep or pulse sweep circles before application to possess the appropriate original resistance and the stable resistance switching behavior.
引用
收藏
页码：207 / 213
页数：7
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