Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel

被引：0

作者：

Yoon, Sung-Min ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea

来源：

FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS | 2016年 / 131卷

关键词：

TEMPERATURE FABRICATION; SOL-GEL; TRANSPARENT; PERFORMANCE; DEVICES; ZNO; POLARIZATION; CAPACITORS;

D O I：

10.1007/978-94-024-0841-6_10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonvolatile memory thin-film transistor using an organic ferroelectric gate insulator and oxide semiconductor active channel is proposed as a promising memory elements embedded onto the next-generation flexible and transparent electronic systems. In this chapter, some important technical issues for this device, such as device structure, process optimization and memory array integration, are extensively discussed. Feasible applications and remaining technological issues to be solved for practical applications are also reviewed.

引用

页码：203 / 223

页数：21

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