Electron microscopy investigation of gallium oxide micro/nanowire structures synthesized via vapor phase growth

被引：6
作者：
Wang, Y
Xu, J
Wang, RM
Yu, DP [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
来源：
MICRON | 2004年 / 35卷 / 06期
关键词：
gallium oxide; nanostructured materials; physical vapor deposition; electron microscopy; vapor-solid growth mechanism;
D O I：
10.1016/j.micron.2004.02.005
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Large-scale micro/nanosized Ga2O3 structures were synthesized via a simple vapor p9hase growth method. The morphology of the as-grown structures varied from aligned arrays of smooth nano/microscale wires to composite and complex microdendrites. We present evidence that the formation of the observed structure depends strongly on its position relative to the source materials (the concentration distribution) and on the growth temperature. A growth model is proposed, based on the vapor-solid (VS) mechanism, which can explain the observed morphologies. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：447 / 453
页数：7
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