Influence of thickness on the structural properties of radio-frequency and direct-current magnetron sputtered TiO2 anatase thin films

被引:12
|
作者
Mukherjee, S. K. [1 ]
Nebatti, A. [2 ]
Mohtascham, F. [1 ]
Schipporeit, S. [1 ]
Notthoff, C. [3 ]
Mergel, D. [1 ]
机构
[1] Univ Duisburg Essen, Fac Phys, Thin Film Technol Grp, D-47048 Duisburg, Germany
[2] Univ Duisburg Essen, Thermodynam Grp, D-47048 Duisburg, Germany
[3] Univ Duisburg Essen, Nanoparticle Proc Technol Grp, D-47048 Duisburg, Germany
关键词
Titanium dioxide; Thin films; Anatase; Sputtering; Lattice distortion; TITANIUM-DIOXIDE; RUTILE TIO2; GROWTH; RF; DEPOSITION; PLASMA;
D O I
10.1016/j.tsf.2014.02.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of TiO2 were deposited by reactive sputtering of a Ti target on unheated substrates and post-heated at 300 C and 500 C. They exhibit a granular structure. Direct current-sputtered films are amorphous as-deposited and crystallize (to pure anatase) only at 500 degrees C. Radio-frequency (rf)-sputtered films are already crystalline (pure anatase) as-deposited on unheated substrates. Above a thickness of 100 nm, the crystallite size, as deduced from the half-width of X-ray diffraction (XRD) peaks, is constant at 35 nm and decreases to zero when the thickness decreases to 25 nm. Below a thickness of 25 nm, the films are X-ray amorphous. Height and half-width of the XRD peaks of rf-sputtered films do not change upon post-heating at 300 or 500 C. A larger lattice parameter ratio c/alpha is observed with respect to the bulk value that decreases with increasing film thickness and is about 1% larger for a film thickness larger than 100 nm. (C) 2014 Published by Elsevier B. V.
引用
收藏
页码:443 / 448
页数:6
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