High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization

被引：14

作者：

Wong, M ^{[1
]}

Kwok, HS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2004年 / 35卷 / 04期

关键词：

thin-film transistor; polycrystalline silicon; nickel;

D O I：

10.1016/S0026-2692(03)00241-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors (TFTs) have been developed and characterized. These TFTs are better than their solid-phase crystallized counterparts in many process and device performance measures, such as shorter and simpler process flow, higher field-effect mobility, reduced leakage current, better immunity to early drain breakdown and much improved spatial uniformity of device parameters. They have been used to realize active matrices for liquid-crystal (LC) and organic lightemitting diode (OLED) flat-panel displays. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：337 / 341

页数：5

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