Bottom-up fill of copper in deep submicrometer holes by electroless plating

被引：77

作者：

Shingubara, S ^{[1
]}

Wang, ZL ^{[1
]}

Yaegashi, O ^{[1
]}

Obata, R ^{[1
]}

Sakaue, H ^{[1
]}

Takahagi, T ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398530, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 06期

关键词：

D O I：

10.1149/1.1707029

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Bottom-up fill of Cu in deep submicrometer via holes was achieved through electroless plating alone for the first time. We investigated the effect of addition of inhibitor molecules to electroless Cu plating solution, and found that sulfopropyl sulfonate (SPS) was highly effective in promoting the bottom-up fill. The tendency for bottom-up filling was enhanced by shrinkage of the hole diameter. This suggests that the diffusion flux of SPS molecules to the bottom of holes was more suppressed for smaller holes. Thus, the Cu deposition rate near the hole bottom is larger than that outside the hole, leading to bottom-up filling. (C) 2004 The Electrochemical Society.

引用

页码：C78 / C80

页数：3

共 30 条

[1] Damascene copper electroplating for chip interconnections [J].

Andricacos, PC ;

Uzoh, C ;

Dukovic, JO ;

Horkans, J ;

Deligianni, H .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1998, 42 (05) :567-574

[2] Electroless and electrolytic seed repair effects on Damascene feature fill [J].

Andryuschenko, T ;

Reid, J .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :33-35

[3] Full copper wiring in a sub-0.25 μm CMOS ULSI technology [J].

Edelstein, D ;

Heidenreich, J ;

Goldblatt, R ;

Cote, W ;

Uzoh, C ;

Lustig, N ;

Roper, P ;

McDevitt, T ;

Motsiff, W ;

Simon, A ;

Dukovic, J ;

Wachnik, R ;

Rathore, H ;

Schulz, R ;

Su, L ;

Luce, S ;

Slattery, J .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :773-776

[4] The decomposition of the sulfonate additive sulfopropyl sulfonate in acid copper electroplating chemistries [J].

Frank, A ;

Bard, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (04) :C244-C250

[5] Characterization of electroless copper as a seed layer for sub-0.1μm interconnects [J].

Gandikota, S ;

McGuirk, C ;

Padhi, D ;

Parikh, S ;

Chen, J ;

Malik, A ;

Dixit, G .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :30-32

[6] ELECTROLESS COPPER DEPOSITION PROCESS USING GLYOXYLIC-ACID AS A REDUCING AGENT [J].

HONMA, H ;

KOBAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (03) :730-733

[7] Modeling pattern density dependent bump formation in copper electrochemical deposition [J].

Im, YH ;

Bloomfield, MO ;

Sen, S ;

Cale, TS .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (03) :C42-C46

[8] Superconformal Electrodeposition in vias [J].

Josell, D ;

Wheeler, D ;

Moffat, TP .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (04) :C49-C52

[9] Benzotriazole as an additive for copper electrodeposition - Influence of triazole ring substitution [J].

Leung, TYB ;

Kang, MC ;

Corry, BF ;

Gewirth, AA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (09) :3326-3337

[10]

LOPATAIN S, 1997, P ADV MET C 1996 MRS, P169

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