Suppression of Hot-Hole Injection in High-Voltage Triple RESURF LDMOS With Sandwich N-P-N Layer: Toward High-Performance and High-Reliability

被引：0
|
作者：
Qiao, Ming [1 ]
Yuan, Zhangyi'an [1 ]
Li, Yi [1 ]
Zhou, Xin [1 ]
Jin, Feng [2 ]
Yang, Jiye [2 ]
Cai, Ying [2 ]
Li, Zhaoji [1 ]
Zhang, Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China
[2] Shanghai Huahong Grace Semicond Mfg Corp, Shanghai, Peoples R China
来源：
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年
关键词：
Burnout; hot-hole injection; LDMOS; triple RESURF; sandwich N-P-N layer; DEVICE;
D O I：
10.1109/ispsd46842.2020.9170104
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Hot-hole induced burnout phenomenon in a high-voltage triple reduced surface field (RESURF) LDMOS with sandwich N-P-N layer is investigated in this work. The sandwich N-P-N structure is employed in the drift region of LDMOS to obtain a further optimized trade-off between specific onresistance (R-on,R-sp) and breakdown voltage (BV). However, experimental results show that the BV drops in the off-state with a period time of 2.7 s and the device burns out. To solve this problem, the corresponding burnout mechanism is analyzed and its countermeasure is proposed and demonstrated by simulation and experiment. As a result, a competitive performance with a low R-on,R-sp of 32.38 m Omega.cm(2) and a high BV of 535 V without burnout is achieved for the triple RESURF LDMOS with sandwich N-P-N layer.
引用
收藏
页码：415 / 418
页数：4
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