Suppression of Hot-Hole Injection in High-Voltage Triple RESURF LDMOS With Sandwich N-P-N Layer: Toward High-Performance and High-Reliability

被引：0

作者：

Qiao, Ming ^{[1
]}

Yuan, Zhangyi'an ^{[1
]}

Li, Yi ^{[1
]}

Zhou, Xin ^{[1
]}

Jin, Feng ^{[2
]}

Yang, Jiye ^{[2
]}

Cai, Ying ^{[2
]}

Li, Zhaoji ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China

[2] Shanghai Huahong Grace Semicond Mfg Corp, Shanghai, Peoples R China

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

关键词：

Burnout; hot-hole injection; LDMOS; triple RESURF; sandwich N-P-N layer; DEVICE;

D O I：

10.1109/ispsd46842.2020.9170104

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Hot-hole induced burnout phenomenon in a high-voltage triple reduced surface field (RESURF) LDMOS with sandwich N-P-N layer is investigated in this work. The sandwich N-P-N structure is employed in the drift region of LDMOS to obtain a further optimized trade-off between specific onresistance (R-on,R-sp) and breakdown voltage (BV). However, experimental results show that the BV drops in the off-state with a period time of 2.7 s and the device burns out. To solve this problem, the corresponding burnout mechanism is analyzed and its countermeasure is proposed and demonstrated by simulation and experiment. As a result, a competitive performance with a low R-on,R-sp of 32.38 m Omega.cm(2) and a high BV of 535 V without burnout is achieved for the triple RESURF LDMOS with sandwich N-P-N layer.

引用

页码：415 / 418

页数：4

共 50 条

[21] DEPLETION LAYER CHARACTERISTICS NEAR THE SURFACE OF V-GROOVED HIGH-VOLTAGE P-N-JUNCTION
CHANG, CY
LIU, WC
HSU, WC
FANG, YK
LIU, RC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C331 - C331
[22] OBIC MEASUREMENTS ON PLANAR HIGH-VOLTAGE P(+)-N JUNCTIONS WITH DIAMOND-LIKE CARBON-FILMS AS PASSIVATION LAYER
FRISCHHOLZ, M
MANDEL, T
HELBIG, R
SCHMIDT, G
HAMMERSCHMIDT, A
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) : 778 - 781
[23] Locally hydrazine doped WSe2 p-n junction toward high-performance photodetectors
Sun, Mengxing
Xie, Dan
Sun, Yilin
Li, Weiwei
Ren, Tianling
NANOTECHNOLOGY, 2018, 29 (01)
[24] High-Performance Organic Photovoltaics Incorporating Bulk Heterojunction and p-i-n Active Layer Structures
Su, Yu-Wei
Tsai, Ching-En
Liao, Tzu-Chien
Wei, Kung-Hwa
SOLAR RRL, 2024, 8 (05)
[25] OBIC MEASUREMENTS ON PLANAR HIGH-VOLTAGE P+-N JUNCTIONS WITH DIAMOND-LIKE CARBON-FILMS AS PASSIVATION LAYER
FRISCHHOLZ, M
MANDEL, T
HELBIG, R
SCHMIDT, G
HAMMERSCHMIDT, A
APPLIED SURFACE SCIENCE, 1993, 65-6 : 784 - 788
[26] O, N co-doped CuCrO2 as efficient hole transport layer for high-performance ultraviolet photodetectors
Huang, Meng
Wang, Yabing
Zhang, Hongrong
Mao, Mingfen
Cen, Baofen
Wang, Tengfei
Zhang, Ziling
Li, Qinghong
Liu, Kaixiang
Kong, Pengfei
Zhang, Jing
Luo, Shengyun
Luo, Guangcan
JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 971
[27] Molecular design with silicon core: toward commercially available hole transport materials for high-performance planar p-i-n perovskite solar cells
Xue, Rongming
Zhang, Moyao
Xu, Guiying
Zhang, Jingwen
Chen, Weijie
Chen, Haiyang
Yang, Ming
Cui, Chaohua
Li, Yaowen
Li, Yongfang
JOURNAL OF MATERIALS CHEMISTRY A, 2018, 6 (02) : 404 - 413
[28] PEDOT:PSS-CrO3 composite hole-transporting layer for high-performance p-i-n structure perovskite solar cells
Zhu, Jia-Yun
Niu, Kai
Li, Meng
Lin, Mo-Qiong
Li, Jia-Hao
Wang, Zhao-Kui
ORGANIC ELECTRONICS, 2018, 54 : 9 - 13
[29] Pseudo-SOI: P-N-p-channel-doped bulk MOSFET for low-voltage high-performance applications
Miyamoto, M
Nagai, R
Nagano, T
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 411 - 414
[30] Tungsten oxide doped N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes
Wang, Fengxia
Qiao, Xianfeng
Xiong, Tao
Ma, Dongge
JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)

← 1 2 3 4 5 →