Suppression of Hot-Hole Injection in High-Voltage Triple RESURF LDMOS With Sandwich N-P-N Layer: Toward High-Performance and High-Reliability

被引：0

作者：

Qiao, Ming ^{[1
]}

Yuan, Zhangyi'an ^{[1
]}

Li, Yi ^{[1
]}

Zhou, Xin ^{[1
]}

Jin, Feng ^{[2
]}

Yang, Jiye ^{[2
]}

Cai, Ying ^{[2
]}

Li, Zhaoji ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China

[2] Shanghai Huahong Grace Semicond Mfg Corp, Shanghai, Peoples R China

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

关键词：

Burnout; hot-hole injection; LDMOS; triple RESURF; sandwich N-P-N layer; DEVICE;

D O I：

10.1109/ispsd46842.2020.9170104

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Hot-hole induced burnout phenomenon in a high-voltage triple reduced surface field (RESURF) LDMOS with sandwich N-P-N layer is investigated in this work. The sandwich N-P-N structure is employed in the drift region of LDMOS to obtain a further optimized trade-off between specific onresistance (R-on,R-sp) and breakdown voltage (BV). However, experimental results show that the BV drops in the off-state with a period time of 2.7 s and the device burns out. To solve this problem, the corresponding burnout mechanism is analyzed and its countermeasure is proposed and demonstrated by simulation and experiment. As a result, a competitive performance with a low R-on,R-sp of 32.38 m Omega.cm(2) and a high BV of 535 V without burnout is achieved for the triple RESURF LDMOS with sandwich N-P-N layer.

引用

页码：415 / 418

页数：4

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