Unique topological surface states of full-Heusler topological crystalline insulators

被引：11
作者：
Anh Pham [1 ]
Li, Sean [1 ]
机构：
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
来源：
PHYSICAL REVIEW B | 2017年 / 95卷 / 11期
基金：
澳大利亚研究理事会;
关键词：
EXPERIMENTAL REALIZATION; PREDICTION;
D O I：
10.1103/PhysRevB.95.115124
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Our theoretical analysis reveals that a family of full-Heusler materials exhibit unique topological surface states with type-I and type-II Dirac quasiparticles. The type-I Dirac surface state is characterized by an enclosed Fermi surface, while the type-II Dirac surfaces occur at the touching of the electron and hole pockets. In addition, due to the layered nature of the full-Heusler crystals structured with a wide range of various elements, such structures induce multiple Dirac surface states with different Lifshitz transitions protected by more than one mirror plane.
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页数：7
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