Deep levels in nitrogen-doped MBE-grown p-ZnSe

被引：1
|
作者：
Qurashi, US
Iqbal, MZ
机构：
[1] Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 12期
关键词：
D O I：
10.1088/0268-1242/12/12/012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep-level transient spectroscopy (DLTS) has been used to investigate and characterize deep-level defects in nitrogen-doped p-type ZnSe layers grown by molecular beam epitaxy on GaAs substrates. At least three prominent levels, H1, H3 and H4, are found in the lower-half bandgap with thermal activation energies 0.31 eV, 0.63 eV and 0.94-0.99 eV respectively. Comparison of their characteristics with the two previous reports shows that, with the exception of H3, these are new levels. In addition, some evidence is presented for three minority carrier (electron) peaks for the first time.
引用
收藏
页码：1615 / 1618
页数：4
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