Deep levels in nitrogen-doped MBE-grown p-ZnSe

被引：1

作者：

Qurashi, US

Iqbal, MZ

机构：

[1] Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 12期

关键词：

D O I：

10.1088/0268-1242/12/12/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep-level transient spectroscopy (DLTS) has been used to investigate and characterize deep-level defects in nitrogen-doped p-type ZnSe layers grown by molecular beam epitaxy on GaAs substrates. At least three prominent levels, H1, H3 and H4, are found in the lower-half bandgap with thermal activation energies 0.31 eV, 0.63 eV and 0.94-0.99 eV respectively. Comparison of their characteristics with the two previous reports shows that, with the exception of H3, these are new levels. In addition, some evidence is presented for three minority carrier (electron) peaks for the first time.

引用

页码：1615 / 1618

页数：4

共 6 条

[1]

HASSE M, 1991, APPL PHYS LETT, V59, P1271

[2] DEEP HOLE TRAPS IN P-TYPE NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].