Electrode distance dependence of photo-induced degradation in hydrogenated amorphous silicon

被引：8
|
作者：
Miyahara, H
Takai, M
Nishimoto, T
Kondo, M
Matsuda, A
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Initiat Thin Film Silicon Solar Cells, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Tokyo, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan
[3] Canon Ecol R&D Ctr, Dept E11, Kyoto 6191795, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期
关键词：
amorphous silicon; electrode distance; higher silane-related-reactive species; cathode heating;
D O I：
10.1016/S0927-0248(02)00094-6
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Electrode distance between cathode and anode is one of the important parameters for fabricating hydrogenated amorphous silicon (a-Si:H) using plasma-enhanced chemical-vapor-deposition system with parallel plate electrodes. In this work, we have investigated the relationship between electrode distance and stability of a resulting a-Si:H. The stability is improved with decreasing electrode distance. At shorter electrode distance, formation of higher silane-related-reactive species is suppressed by heating effect of gas molecules near the cathode due to a proximity to the heated anode. Using cathode heating method, the stability of a-Si:H is improved even at long electrode distances. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：351 / 356
页数：6
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