Electrode distance dependence of photo-induced degradation in hydrogenated amorphous silicon

被引：8

作者：

Miyahara, H

Takai, M

Nishimoto, T

Kondo, M

Matsuda, A

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Initiat Thin Film Silicon Solar Cells, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Tokyo, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

[3] Canon Ecol R&D Ctr, Dept E11, Kyoto 6191795, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

关键词：

amorphous silicon; electrode distance; higher silane-related-reactive species; cathode heating;

D O I：

10.1016/S0927-0248(02)00094-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Electrode distance between cathode and anode is one of the important parameters for fabricating hydrogenated amorphous silicon (a-Si:H) using plasma-enhanced chemical-vapor-deposition system with parallel plate electrodes. In this work, we have investigated the relationship between electrode distance and stability of a resulting a-Si:H. The stability is improved with decreasing electrode distance. At shorter electrode distance, formation of higher silane-related-reactive species is suppressed by heating effect of gas molecules near the cathode due to a proximity to the heated anode. Using cathode heating method, the stability of a-Si:H is improved even at long electrode distances. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：351 / 356

页数：6

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