Spin-dependent exciton-exciton interaction in ZnSe quantum wells

被引:0
|
作者
Tröndle, D
Wachter, S
Lüerssen, D
Kalt, H
Blewett, IJ
Galbraith, I
Ohkawa, K
Hommel, D
机构
[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
[2] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[3] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany
来源
关键词
D O I
10.1002/1521-396X(200003)178:1<535::AID-PSSA535>3.0.CO;2-M
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The loss of phase coherence of optically oriented excitons in ZnSe quantum wells is determined from the decay of the four-wave mixing signal in the presence of a background exciton density generated by a prepulse. The homogeneous linewidth of the exciton resonance strongly depends on the optical orientation, the density, and the spin-relaxation dynamics of the background excitons. Modelling of the data reveals that exciton-exciton interaction including fermion exchange dominates while the exciton-exciton exchange process and dipole-dipole scattering are negligible. Qualitative agreement between theory and experiment is achieved when exciton spin relaxation to dark states is considered.
引用
收藏
页码:535 / 538
页数:4
相关论文
共 50 条
  • [41] Coherent exciton-exciton interaction in wide-gap II-VI quantum wells - The role of alloy disorder
    Nickolaus, H
    Henneberger, F
    Schulzgen, A
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 780 - 783
  • [42] EXCITON-EXCITON INTERACTION IN CDS, CDSE, AND ZNO
    MAGDE, D
    MAHR, H
    PHYSICAL REVIEW LETTERS, 1970, 24 (16) : 890 - &
  • [43] Exciton-exciton interaction through barrier layer
    Hirasawa, M
    Ishihara, T
    JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) : 195 - 197
  • [44] EXCITON-EXCITON INTERACTION AND RESONANT NONLINEARITIES IN GASE
    VANDYSHEV, YV
    DNEPROVSKII, VS
    KLIMOV, VI
    KOVALYUK, ZD
    NOVIKOV, MG
    OKOROKOV, DK
    FURTICHEV, AI
    FIZIKA TVERDOGO TELA, 1989, 31 (06): : 131 - 138
  • [45] EXCITON-EXCITON INTERACTION IN KMNF3
    STRAUSS, E
    MANISCALCO, WJ
    YEN, WM
    KELLNER, UC
    GERHARDT, V
    PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 824 - 827
  • [46] EFFECTIVE EXCITON-EXCITON INTERACTION IN POLAR SEMICONDUCTORS
    ADAMOWSKI, J
    BEDNAREK, S
    SOLID-STATE ELECTRONICS, 1979, 22 (01) : 33 - 35
  • [47] Direct Measurement of Exciton-Exciton Interaction Energy
    Voeroes, Z.
    Snoke, D. W.
    Pfeiffer, L.
    West, K.
    PHYSICAL REVIEW LETTERS, 2009, 103 (01)
  • [48] Spatial breathing of the exciton distribution in ZnSe quantum wells
    Dal Don, B
    Zhao, H
    Schwartz, G
    Kalt, H
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03): : 579 - 582
  • [49] Exciton recombination dynamics in ZnCdSe/ZnSe quantum wells
    Taylor, RA
    Adams, RA
    Ryan, JF
    Park, RM
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 822 - 825
  • [50] INFLUENCE OF EXCITON-EXCITON INTERACTIONS ON THE COHERENT OPTICAL-RESPONSE IN GAAS QUANTUM-WELLS
    BOTT, K
    HELLER, O
    BENNHARDT, D
    CUNDIFF, ST
    THOMAS, P
    MAYER, EJ
    SMITH, GO
    ECCLESTON, R
    KUHL, J
    PLOOG, K
    PHYSICAL REVIEW B, 1993, 48 (23): : 17418 - 17426