1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

被引：21

作者：

Bian, Zijun ^{[1
]}

Rae, Katherine J. ^{[1
]}

McKenzie, Adam F. ^{[1
,2
]}

King, Ben C. ^{[1
]}

Babazadeh, Nasser ^{[1
]}

Li, Guangrui ^{[1
]}

Orchard, Jonathan R. ^{[2
]}

Gerrard, Neil D. ^{[2
]}

Thoms, Stephen ^{[1
]}

MacLaren, Donald A. ^{[3
]}

Taylor, Richard J. E. ^{[1
]}

Childs, David ^{[1
]}

Hogg, Richard A. ^{[1
]}

机构：

[1] Univ Glasgow, James Watt Sch Engn, Glasgow G12 8QQ, Lanark, Scotland

[2] CST Global Ltd, Glasgow G72 0BN, Lanark, Scotland

[3] Univ Glasgow, Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2020年 / 32卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

Surface emitting lasers; Photonic crystals; Photonics; Optical surface waves; Indium phosphide; III-V semiconductor materials; Epitaxial layers; Photonic crystal; semiconductor growth; semiconductor lasers; surface emitting lasers; BAND-STRUCTURE; HIGH-POWER; DESIGN;

D O I：

10.1109/LPT.2020.3039059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.

引用

页码：1531 / 1534

页数：4

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