A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution

被引:3
作者
Zhu, Yulong [1 ]
Wang, Xinzhe [2 ,3 ]
Zhu, Chenxi [5 ]
Chen, Zhaoyuan [2 ,3 ,4 ,6 ]
Huang, Zhisheng [7 ]
Jin, Zhanhong [7 ]
Li, Yang [2 ,3 ]
Liang, Futian [2 ,3 ]
Liao, Shengkai [2 ,3 ,4 ,5 ]
Peng, Chengzhi [2 ,3 ]
Jin, Ge [1 ]
机构
[1] Univ Sci & Technol China, State Key Lab Particle Detect & Elect, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Peoples R China
[3] Univ Sci & Technol China, Sch Phys Sci, Hefei 230026, Peoples R China
[4] Univ Sci & Technol China, CAS Ctr Excellence Quantum Informat & Quantum Phys, Hefei 230026, Peoples R China
[5] Univ Sci & Technol China, Sch Cyberspace Secur, Hefei 230026, Peoples R China
[6] PLA Rocket Force Univ Engn, Xian 710025, Peoples R China
[7] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Peoples R China
基金
中国国家自然科学基金;
关键词
DESIGN CONSIDERATIONS; OUTPUT; CIRCUIT;
D O I
10.1063/5.0118778
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 mu m SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is & SIM;21 omega. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems. (C) 2022 Author(s).
引用
收藏
页数:10
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