Stability of graphene-silicon heterostructure solar cells

被引：34

作者：

Brus, V. V. ^{[1
,2
]}

Gluba, M. A. ^{[1
]}

Zhang, X. ^{[1
]}

Hinrichs, K. ^{[3
]}

Rappich, J. ^{[1
]}

Nickel, N. H. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany

[2] Chernivtsi Natl Univ, Dept Elect & Energy Engn, UA-58012 Chernovtsy, Ukraine

[3] Leibniz Inst Analyt Wissensch ISAS eV, Dept Berlin, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 04期

关键词：

cells diodes; graphene; heterostructures; Schottky silicon; solar; TRANSPARENT; EFFICIENCY; FILMS;

D O I：

10.1002/pssa.201330265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The stability of undoped graphene-silicon heterostructure solar cells was investigated. Single-layer graphene was grown by chemical vapor deposition on copper foil. Prior to the transfer of graphene to the silicon wafer, the flat Si(111) surface was passivated with hydrogen or methyl groups (CH3). The conversion efficiency, , of the H terminated Si device was negligible small (0.1%), whereas that of the CH3 passivated Si was 2 and 4.2% at 100mW (AM 1.5) and 20mW of light intensity, respectively. After 28 days in ambient atmosphere decreased only slightly to 1.5 and 3.7%. This small change of is due to the high stability of the CH3 passivated graphene-Si(111) interface. The methylated Si surface shows a high degree of chemical stability especially during the graphene transfer process.

引用

页码：843 / 847

页数：5

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