Well-aligned zinc sulfide nanobelt arrays: Excellent field emitters

被引:40
作者
Lu, Fang [1 ]
Cai, Weiping
Zhang, Yugang
Li, Yue
Sun, Fengqiang
Heo, Sung Hwan
Cho, Sung Oh
机构
[1] Chinese Acad Sci, Anhui Key Lab Nanomat & Nanotechnol, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Korea Adv Inst Sci & Technol, Dept Nucl & Quantum Engn, Taejon 305701, South Korea
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2403913
中图分类号
O59 [应用物理学];
学科分类号
摘要
Large-scale, well-aligned and oriented wurtzite ZnS nanobelt arrays are fabricated by a simple solvothermal reaction and subsequent heat treatment. The nanobelts grow along the [0001] direction perpendicularly on a zinc substrate, which are about 30 nm in thickness, several hundreds of nanometers in width, and up to 4 mu m in length. Importantly, such nanostructured arrays show a good field emission property with low turn-on field (3.8 V mu m(-1)) and high field enhancement factor (similar to 1800), which is ascribed to the top edges and corners of the freestanding and well aligned nanobelts, and good electric contact with the conducting substrate where they grow. (c) 2006 American Institute of Physics.
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页数:3
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