Mismatch Measure Improvement Using Kelvin Test Structures in Transistor Pair Configuration in Sub-Hundred Nanometer MOSFET Technology

被引：5

作者：

Mezzomo, Cecilia M. ^{[1
,2
]}

Marin, Mathieu ^{[1
]}

Leyris, Cedric ^{[1
]}

Ghibaudo, Gerard ^{[2
]}

机构：

[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

[2] IMEP LAHC, Minatec, F-38016 Grenoble, France

来源：

ICMTS 2009: 2009 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2009年

关键词：

D O I：

10.1109/ICMTS.2009.4814611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a mismatch test structure in standard pair configuration using Kelvin method is introduced to better estimate the MOSFET local electrical fluctuations in sub-hundred nanometer technologies. Considering this test structure configuration, the impact of extern access connections on threshold voltage (Vt), gain factor (beta) and drain current (I-D) mismatch extraction is investigated. To exhibit the impact of this parameter, the Vt and beta are then extracted using extrapolation method. We demonstrate that the variability of access connections does not impact Vt mismatch whereas drain current matching is underestimated without Kelvin method.

引用

页码：62 / +

页数：2

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