Determination of the concentration of hot-carrier-induced bulk defects in laser-recrystallized polysilicon thin film transistors

被引：19

作者：

Brown, TM ^{[1
]}

Migliorato, P ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a method to investigate hot carrier induced defects in laser recrystallized polysilicon thin film transistors, based on the use of a structure with front and back gate and the analysis of the off current. The maximum process temperature for these devices was 425 degrees C. We find that both positive and negative V-GS produce similar degradation of the characteristics and the main effect is bulk, rather than interface, state creation. The changes in the I-V characteristics are accounted for by an increase of the dangling bond concentration, which is obtained as a fitting parameter, giving a good agreement between experiment and simulation. (C) 2000 American Institute of Physics. [S0003-6951(00)01708-3].

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页码：1024 / 1026

页数：3

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