Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates

被引：5
作者：
Lin, SD
Lee, CP
Hsieh, WH
Suen, YW
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
[3] Natl Chung Hsing Univ, Dept Phys, Taichung 40227, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期
关键词：
D O I：
10.1063/1.1515878
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. (C) 2002 American Institute of Physics.
引用
收藏
页码：3007 / 3009
页数：3
相关论文
共 10 条
  • [1] FORMATION OF LATERAL QUANTUM-WELLS IN VERTICAL SHORT-PERIOD SUPERLATTICES BY STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS
    CHENG, KY
    HSIEH, KC
    BAILLARGEON, JN
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2892 - 2894
  • [2] InAs/InP(001) quantum wire formation due to anisotropic stress relaxation:: in situ stress measurements
    García, JM
    González, L
    González, MU
    Silveira, JP
    González, Y
    Briones, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 975 - 979
  • [3] MAGNETORESISTANCE OF 2-DIMENSIONAL ELECTRONS IN A LATERAL LATTICE OF ANTIWIRES
    GUSEV, GM
    BASMAJI, P
    KVON, ZD
    LITVIN, LV
    NASTAUSHEV, YV
    TOROPOV, AI
    [J]. SOLID STATE COMMUNICATIONS, 1993, 85 (04) : 317 - 320
  • [4] Faceting evolution during self-assembling of InAs/InP quantum wires
    Gutiérrez, HR
    Cotta, MA
    de Carvalho, MMG
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (23) : 3854 - 3856
  • [5] COMPOSITIONAL MODULATION AND LONG-RANGE ORDERING IN GAP INP SHORT-PERIOD SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    HSIEH, KC
    BAILLARGEON, JN
    CHENG, KY
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (21) : 2244 - 2246
  • [6] MAGNETOOPTICAL ABSORPTION IN A ONE-DIMENSIONAL ARRAY OF NARROW ANTIWIRES
    HUANG, DH
    GUMBS, G
    HORING, NJM
    [J]. PHYSICAL REVIEW B, 1994, 49 (16): : 11463 - 11466
  • [7] KIM GH, 1995, APPL PHYS LETT, V78, P3896
  • [8] Anisotropic mobilities of low-dimensional electrons at stepped n-AlGaAs/GaAs interfaces with 15 nm periodicity on vicinal (111)B substrates
    Nakamura, Y
    Noda, T
    Motohisa, J
    Sakaki, H
    [J]. PHYSICA E, 2000, 8 (03): : 219 - 222
  • [9] OHISSON BJ, 2001, J APPL PHYS, V89, P5726
  • [10] The growth of high mobility heterostructures on (311)B GaAs
    Simmons, MY
    Churchill, AC
    Kim, GH
    Hamilton, AR
    Kurobe, A
    Mace, DR
    Ritchie, DA
    Pepper, M
    [J]. MICROELECTRONICS JOURNAL, 1995, 26 (08) : 897 - 902
1