The growth and electronic structures of epitaxial CrSi2 films prepared on Si(111) substrate

被引：2

作者：

Kim, KH ^{[1
]}

Kang, JS

Olson, CG

机构：

[1] Gyeongsang Natl Univ, Dept Phys, Chinju 660701, South Korea

[2] Catholic Univ Korea, Dept Phys, Pucheon 422743, South Korea

[3] Iowa State Univ, Ames Lab, Ames, IA 50011 USA

来源：

SURFACE REVIEW AND LETTERS | 1999年 / 6卷 / 06期

关键词：

D O I：

10.1142/S0218625X99001220

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Highly epitaxial CrSi2 films were grown on Si(111) substrate by Cr deposition on Si(111)-(7 x 7) surface at 450 degrees C followed by in situ annealing at 900-1100 degrees C in ultrahigh vacuum. CrSi2(001) plane was grown parallel to the Si(111) plane with a CrSi2[210]//Si[110] matching face relationship. The valence band (VB) photoemission for the 1200-Angstrom-thick CrSi2 was measured at room temperature and 20 K by using synchrotron radiation (h nu = 20-120 eV). Overall shapes of the two energy distribution curves (EDC's) were similar. Two peaks were observed in the EDC's corresponding to the bonding and the nonbonding Cr-d states in the CrSi2. The onset of the VB photoemission measured at 20 K was located at about 0.32 eV below Fermi level, due to the energy band gap opening at low temperature.

引用

页码：1103 / 1108

页数：6

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