The mechanisms for linear polarization loss of in-plane photoluminescence of InGaAs/GaAs quantum well and quantum dot structures

被引：0

作者：

Aleshkin, VY

Zvonkov, BN

Malkina, IG

Chernov, AL

Romanov, YA

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

[2] State Univ, PhysicoTech Inst, Nizhnii Novgorod 603600, Russia

来源：

PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 1999年 / 12卷

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanisms for linear polarization loss of photoluminescence from quantum wells and quantum dots in InGaAs/GaAs structures observed from cleavages have been investigated. It is found that the mechanisms for polarization loss of in-plane photoluminescence are different for OD and 2D hole states. It is shown that the potential energy asymmetry in the InGaAs layer plays an important role in the loss of the photoluminescence polarization from quantum well.

引用

页码：15 / 21

页数：7

共 14 条

[1]

ALESHKIN VY, 1995, JETP LETT+, V62, P346

[2]

ALESHKIN VY, 1996, P 23 INT C PHYS SEM, P1397

[3]

AVRUTSKII IA, 1992, TECH POLUPROV, V26, P1907

[4]

BASTARD G, 1988, ADV ELECTRON EL PHYS, V72, P1