Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit

被引：168

作者：

Roelkens, G. ^{[1
]}

Van Thourhout, D.

Baets, R.

Notzel, R.

Smit, M.

机构：

[1] Univ Ghent, Dept Informat Technol, Photon Res Grp, B-9000 Ghent, Belgium

[2] Eindhoven Univ Technol, OED Grp, NL-5600 MB Eindhoven, Netherlands

来源：

OPTICS EXPRESS | 2006年 / 14卷 / 18期

关键词：

D O I：

10.1364/OE.14.008154

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Laser emission from an InP/InGaAsP thin film epitaxial layer bonded to a Silicon-on-Insulator waveguide circuit was observed. Adhesive bonding using divinyl-tetramethyldisiloxane-benzocyclobutene (DVS-BCB) was used to integrate the InP/InGaAsP epitaxial layers onto the waveguide circuit. Light is coupled from the laser diode into an underlying waveguide using an adiabatic inverted taper approach. 0.9mW optical power was coupled into the SOI waveguide using a 500 mu m long laser. Besides for use as a laser diode, the same type of devices can be used as a photodetector. 50 mu m long devices obtained a responsivity of 0.23A/W. (c) 2006 Optical Society of America.

引用

收藏

页码：8154 / 8159

页数：6

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