A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications

被引：9

作者：

Ohlrogge, M. ^{[1
]}

Seelmann-Eggebert, M. ^{[1
]}

Leuther, A. ^{[1
]}

Massler, H. ^{[1
]}

Tessmann, A. ^{[1
]}

Weber, R. ^{[1
]}

Schwantuschke, D. ^{[1
]}

Schlechtweg, M. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Fraunhofer IAF, Freiburg, Germany

来源：

2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2014年

关键词：

High Electron Mobility Transistor (HEMT); Small signal model; Submillimeter Wave; EM-simulation; Millimeter wave technology;

D O I：

10.1109/MWSYM.2014.6848318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we utilize a new approach for a small signal model which is scalable from very small to rather large transistors in a wide frequency range from 50 MHz up to 500 GHz. We show that with increasing frequency and decreasing transistor size we need to take into account termination effects at the open ends of the transistor electrodes. This new approach is based on a decomposition of the transistor into multiport sections. These sections are simulated individually by an electromagnetic field solver and then parameterized by compact networks. The model is verified by S-parameter measurements up to 450 GHz.

引用

页数：4

共 5 条

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[3]

Seelmann-Eggebert M., 2013, German Patent, Patent No. [102012205943.1, 102012205943]

[4]

Seelmann-Eggebert M, 2010, IEEE MTT S INT MICR, P501, DOI 10.1109/MWSYM.2010.5517768

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