Characterization of CuAlO2 films prepared by dc reactive magnetron sputtering

被引：32

作者：

Reddy, A. Sivasankar

Reddy, P. Sreedhara

Uthanna, S.

Rao, G. Mohan ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2006年 / 17卷 / 08期

关键词：

D O I：

10.1007/s10854-006-0007-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of copper aluminum oxide (CuAlO2) were prepared on glass substrates by dc magnetron sputtering at a substrate temperature of 523 K under various oxygen partial pressures in the range 1 x 10(-4) - 3 x 10(-3) mbar. The dependence of cathode potential on the oxygen partial pressure was explained in terms of oxidation of the sputtering target. The influence of oxygen partial pressure on the structural, electrical and optical properties was systematically studied. p-Type CuAlO2 films with polycrystalline nature, electrical resistivity of 3.1 Omega cm, Hall mobility of 13.1 cm(2) V-1 s(-1) and optical band gap of 3.54 eV were obtained at an oxygen partial pressure of 6 x 10(-4) mbar.

引用

页码：615 / 620

页数：6

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