Spin-filtering effect of thin Al2O3 barrier on tunneling magnetoresistance

被引：7

作者：

Joo, Sungjung ^{[1
]}

Jung, K. Y. ^{[2
,3
]}

Jun, K. I. ^{[3
]}

Kim, D. S. ^{[2
]}

Shin, K. H. ^{[3
]}

Hong, J. K. ^{[2
]}

Lee, B. C. ^{[4
]}

Rhie, K. ^{[2
]}

机构：

[1] KRISS, Ctr Elect & Magnetism, Taejon 305340, South Korea

[2] Korea Univ, Dept Display & Semicond Phys, Sejong 339700, South Korea

[3] KIST, Spintron Device Res Ctr, Seoul 136791, South Korea

[4] Inha Univ, Dept Phys, Inchon 402751, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 15期

基金：

新加坡国家研究基金会;

关键词：

ROOM-TEMPERATURE; JUNCTIONS; FILMS;

D O I：

10.1063/1.4870812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunneling magnetoresistance (TMR) dependence on the Al2O3 barrier thickness was investigated for CoFe/Al2O3/CoFe magnetic tunnel junctions (MTJs). MTJs with very thin Al2O3 layers were grown by inserting an amorphous FeZr buffer layer whose role is only to reduce the roughness of bottom electrode. The TMR decreased as the thickness of the Al2O3 layer was reduced. The results are analyzed with the dependence of the spin-filtering effect on the Al2O3 thickness. It was found that a simple model of separating sp- and d-like electrons does not work, and it may suggest that the tunneling electrons are in rather hybridized state. (C) 2014 AIP Publishing LLC.

引用

页数：3

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