Photoelectrochemical Studies on Metal-Doped Graphitic Carbon Nitride Nanostructures under Visible-Light Illumination

Recently, the engineering of optical bandgaps and morphological properties of graphitic carbon nitride (g-C3N4) has attracted significant research attention for photoelectrodes and environmental remediation owing to its low-cost synthesis, availability of raw materials, and thermal physical-chemical stability. However, the photoelectrochemical activity of g-C3N4-based photoelectrodes is considerably poor due to their high electron-hole recombination rate, poor conductivity, low quantum efficiency, and active catalytic sites. Synthesized Ni metal-doped g-C3N4 nanostructures can improve the light absorption property and considerably increase the electron-hole separation and charge transfer kinetics, thereby initiating exceptionally enhanced photoelectrochemical activity under visible-light irradiation. In the present study, Ni dopant material was found to evince a significant effect on the structural, morphological, and optical properties of g-C3N4 nanostructures. The optical bandgap of the synthesized photoelectrodes was varied from 2.53 to 2.18 eV with increasing Ni dopant concentration. The optimized 0.4 mol% Ni-doped g-C3N4 photoelectrode showed a noticeably improved six-fold photocurrent density compared to pure g-C3N4. The significant improvement in photoanode performance is attributable to the synergistic effects of enriched light absorption, enhanced charge transfer kinetics, photoelectrode/aqueous electrolyte interface, and additional active catalytic sites for photoelectrochemical activity.