The challenges in guided self-assembly of Ge and InAs quantum dots on Si

被引：0
|
作者：
Zhao, Z. M.
Yoon, T. S.
Feng, W.
Li, B. Y.
Kim, J. H.
Liu, J.
Hulko, O.
Xie, Y. H.
Kim, H. M.
Kim, K. B.
Kim, H. J.
Wang, K. L.
Ratsch, C.
Caflisch, R.
Ryu, D. Y.
Russell, T. P.
机构：
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[4] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA
[5] Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA
来源：
THIN SOLID FILMS | 2006年 / 508卷 / 1-2期
关键词：
Ge; InAs; quantum dots; self-assembly;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：195 / 199
页数：5
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