The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

被引：28

作者：

Chen, Ze-Hui ^{[1
]}

Li, Cheng-Ying ^{[2
]}

Chu, Sheng-Yuan ^{[1
,2
]}

Tsai, Cheng-Che ^{[3
]}

Wang, Yi-Hsun ^{[2
]}

Kao, Hsueh-Yu ^{[2
]}

Wei, Chia-Ling ^{[2
]}

Huang, Yen-Hsiang ^{[4
]}

Hsiao, Po-Yu ^{[4
]}

Liu, Yun-Hui ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Dept Nanointegrated Circuit Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Design Univ, Dept Game & Animat Tung Fang, Kaohsiung 829, Taiwan

[4] Southern Taiwan Univ Sci & Technol, Dept Mech Engn, Tainan 710, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 10期

关键词：

Aluminum nitride (AlN) piezoelectric film; lead-free piezoelectric MEMS accelerometer system; ENHANCEMENT; FILMS; ALN;

D O I：

10.1109/TED.2020.3019230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we successfully deposited c-axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a c-axis monocrystal were identified. The effective d(33), f value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.

引用

页码：4399 / 4404

页数：6

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