New opportunities in interferometric lithography using extreme ultraviolet tabletop lasers

被引：6

作者：

Wachulak, Przemyslaw W. ^{[1
]}

Urbanski, Lukasz ^{[1
]}

Capeluto, Maria G. ^{[2
]}

Hill, David ^{[3
]}

Rockward, Willie S. ^{[3
]}

Iemmi, Claudio ^{[2
]}

Anderson, Erik H. ^{[4
]}

Menoni, Carmen S. ^{[1
]}

Rocca, Jorge J. ^{[1
]}

Marconi, Mario C. ^{[1
]}

机构：

[1] Colorado State Univ, Dept Elect & Comp Engn, NSF ERC Extreme Ultraviolet Sci & Technol, Ft Collins, CO 80523 USA

[2] Univ Buenos Aires, Fac Ciencias Exactas & Nat, Dept Fis, RA-1428 Buenos Aires, DF, Argentina

[3] Morehouse Coll, Dept Phys, Atlanta, GA 30314 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2009年 / 8卷 / 02期

关键词：

nanopatterning; interferometric lithography; extreme ultraviolet (EUV) lasers; X-RAY LASER; INTERFERENCE LITHOGRAPHY; NANOIMPRINT LITHOGRAPHY; REPETITION-RATE; PHASE-LOCKING; GRATINGS; NM; ARRAYS; NANOLITHOGRAPHY; EXPOSURE;

D O I：

10.1117/1.3129837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of tabletop extreme ultraviolet (EUV) lasers opens now the possibility to realize interferometric lithography systems at EUV wavelengths that easily fit on the top of an optical table. The high degree of spatial and temporal coherence and high brightness of the compact EUV laser sources make them a good option for interferometric applications. The combination of these novel sources with interferometric lithography setups brings to the laboratory environment capabilities that so far had been restricted exclusively to large synchrotron facilities. (c) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3129837]

引用

页数：7

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