Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions

被引：4

作者：

Vedyayev, A. ^{[1
,2
]}

Ryzhanova, N. ^{[1
,2
]}

Strelkov, N. ^{[1
,2
]}

Titova, M. ^{[1
]}

Chshiev, M. ^{[2
]}

Rodmacq, B. ^{[2
]}

Auffret, S. ^{[2
]}

Cuchet, L. ^{[2
]}

Nistor, L. ^{[3
]}

Dieny, B. ^{[2
]}

机构：

[1] Moscow Lomonosov State Univ, Dept Phys, Moscow 119991, Russia

[2] Univ Grenoble Alpes, CNRS, SPINTEC, CEA, F-38000 Grenoble, France

[3] Appl Mat Inc, F-38000 Grenoble, France

来源：

PHYSICAL REVIEW B | 2017年 / 95卷 / 06期

基金：

欧洲研究理事会;

关键词：

MAGNETORESISTANCE; CONDUCTANCE;

D O I：

10.1103/PhysRevB.95.064420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit interaction in the insulating barrier. ATMR represents the difference of tunnel magnetoresistance (TMR) amplitude measured with in-plane and out-of-plane magnetic configurations. It is demonstrated that within the spin-polarized free-electron model the change of conductance associated with the ATMR is exactly twice the change of conductance measured at full saturation (i. e., in parallel configuration of magnetizations) between in-plane and out-of-plane configuration, i. e., the tunneling anisotropic magnetoresistance (TAMR). Both ATMR and TAMR are closely related to the TMR amplitude and spin-orbit constant. The predicted ATMR phenomenon is confirmed experimentally, showing a few percent value in the case of the widely studied CoFeB/MgO/CoFeB based MTJ.

引用

页数：6

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